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| MITSUBISHI Nch IGBT MITSUBISHI Nch IGBT CT90AM-18 CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR CT90AM-18 OUTLINE DRAWING 20MAX. Dimensions in mm 5 2 6 3.2 26 1 2 1 0.5 3 5.45 5.45 q VCES ............................................................................... 900V q IC ......................................................................................... 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation Voltage 4.0 GATE COLLECTOR EMITTER COLLECTOR TO-3PL APPLICATION Microwave oven, Electoromagnetic cooking devices, Rice-cookers MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg (Tc = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature VGE = 0V Conditions Ratings 900 25 30 60 120 40 250 -40 ~ +150 -40 ~ +150 20.6MIN. 2.5 Unit V V V A A A W C C Sep. 2000 MITSUBISHI Nch IGBT CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR ELECTRICAL CHARACTERISTICS Symbol ICES IGES VGE (th) VCE (sat) Cies Coes Cres td (on) tr td (off) tf Etail Itail VEC trr Rth (ch-c) Rth (ch-c) Parameter (Tj = 25C) Test conditions VCE = 900V, VGE = 0V VGE = 20V, VCE = 0V VCE = 10V, IC = 6mA IC = 60A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz Limits Min. -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- 4.0 1.55 11000 180 125 0.05 0.10 0.20 0.30 0.6 6 -- 0.5 -- -- Max. 1.0 0.5 6.0 1.95 -- -- -- -- -- -- -- 1.0 12 3.0 2.0 0.5 4.0 Unit mA A V V pF pF pF s s s s mJ/pls A V s C/W C/W Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Tail loss Tail current Emitter-collector voltage Diode reverse recovery time Thermal resistance Thermal resistance VCC = 300V, IC = 60A, VGE = 15V, RG = 0 ICP = 60A, Tj = 125C, dv/dt = 200V/s IE = 60A, VGE = 0V IE = 60A, dis/dt = -20A/s Junction to case Junction to case Sep. 2000 |
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